Fig. 1 from The Effect of High‐lying Levels on Atomic Models Relevant to Spectroscopic Analyses of Solar Extreme‐Ultraviolet Spectra

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The Effect of High‐lying Levels on Atomic Models Relevant to Spectroscopic Analyses of Solar Extreme‐Ultraviolet Spectra

Authors: R. Doron, G. A. Doschek, U. Feldman, A. K. Bhatia, and A. Bar-Shalom

Doron et al. 2002 The Astrophysical Journal 574 504.

Provider: AAS Journals

Caption: Fig. 1.

Calculated intensity of the 2s² ¹S₀–2s2p ³P₁ Be‐like Si line as a function of the highest principal quantum number n of the configurations included in the atomic model. The solid and dashed curves represent results calculated at 135 and 180 eV, respectively. The percent increases are relative to the ﹩n=2﹩ basic model.

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